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• Intel Corporation, the Odisha government and 3DGS have signed a memorandum of understanding to introduce semiconductor substrate manufacturing technology in India.
• The proposed facility will be developed in the Bhubaneswar-Khurda region with an estimated investment of around USD 3.3 billion.
• The project will be implemented in phases over five to six years and is expected to create more than 1,800 direct high-skilled jobs.
• The facility will manufacture advanced packaging glass core substrates, high-density interconnect substrates and related semiconductor technologies.
• The development forms part of India’s broader push to strengthen its semiconductor ecosystem ahead of the proposed India Semicon Mission 2.0.
India’s semiconductor manufacturing ambitions received a boost in the past week as Intel Corporation, the Odisha government and 3DGS signed a memorandum of understanding (MoU) to bring semiconductor substrate manufacturing technology to the country. The agreement, witnessed by Union Minister for Electronics and Information Technology Ashwini Vaishnaw, Odisha Chief Minister Mohan Charan Majhi, Intel Chief Executive Officer Lip-Bu Tan and other dignitaries, is expected to lead to one of the country’s largest high-technology manufacturing investments. Advertisement
According to an official statement, the proposed project involves an estimated investment of approximately USD 3.3 billion and will be located in the Bhubaneswar-Khurda region of Odisha. The project also marks the first such initiative involving global chipmaker Intel in India’s semiconductor manufacturing sector.
Semiconductor substrates form a critical layer of a chip on which electronic circuits are built. The proposed facility will focus on manufacturing advanced packaging glass core substrates, high-density interconnect substrates and other associated semiconductor technologies. Intel is expected to support the project through technology know-how and process expertise.
The investment is planned to be executed in multiple phases over a period of five to six years. Once operational, the facility is expected to generate more than 1,800 direct high-skilled employment opportunities. In addition, the project is anticipated to create substantial indirect employment across manufacturing, supply chain and technology-related sectors.
Government officials stated that the project is expected to contribute to capability development within India’s semiconductor industry while supporting ecosystem expansion and export-oriented manufacturing. The initiative aligns with the Centre’s efforts to establish a comprehensive semiconductor value chain in the country, spanning design, manufacturing, packaging and supporting infrastructure.
Speaking at the event, Vaishnaw welcomed the agreement and said the partnership between the Odisha government, Intel and 3DGS would further strengthen India’s semiconductor ecosystem. He noted that the participation of leading global technology firms reflected growing industry confidence in India’s semiconductor programme.
The minister also highlighted the entry of major semiconductor equipment and technology companies, including Applied Materials, Lam Research, Tokyo Electron and Merck Electronics. He further referred to the recently signed agreement between Tata Electronics and ASML as evidence of increasing global engagement with India’s semiconductor sector.
Vaishnaw added that the government is preparing to launch the next phase of its semiconductor programme through India Semicon Mission 2.0. The proposed initiative is expected to extend incentives across the semiconductor manufacturing ecosystem, including suppliers of gases, chemicals and other critical inputs required for chip production.
Source - PTI
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